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GWS - Dual 12V N-Channel Power MOSFET

Numéro de référence GWS2111
Description Dual 12V N-Channel Power MOSFET
Fabricant GWS 
Logo GWS 





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GWS2111 fiche technique
GWS2111
Dual 12V N-Channel Power
MOSFET
GWS2111
V(BR)DSS
rDS(on)
Product Summary
ID=250uA
VGS=4.5V
12.0 V
34 mΩ
Min
Typ
Features
• Low RDS (on) in a small footprint
• Ultra low gate charge and figure of merit
• Chip-scale 0.77 mm x 0.77 mm LGA package
• Low Thermal Resistance
Equivalent Circuit
FET1
FET2
Gate1
Gate2
Applications
• Li ion Battery Protection
• Portable Devices, Cell Phones, PDA
• Rated for short circuit and over current protection
• Integrated gate diodes provide ESD protection of 2500V HBM.
Source1
Source2
Description
The GWSXXXX is a Dual 12V, 34 mΩ, N-Channel Power Mosfet used
for Li ion battery protection. It is offered in a chip-scale 0.77 mm X 0.77
mm LGA with a very low thickness profile of 0.20 mm. The device uses
Great Wall Semiconductor’s patented Lateral PowerTM CMOS
technology. It has extremely high power density, reducing the board
size of Li Ion Battery power system. Designed for hand held devices
with a high level of ESD protection.
G2 S2
G1 S1
0.77 mm
Bottom View
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwis e
noted)
Parameter
Symbol Steady State
Drain-Source Voltage
VDS 12
Gate-Source Voltage
a
Drain Current
VGS ± 8
ID 1.0
Pulsed Drain Current
a
Maximum Power Dissipation
o
TA=25 C
o
TA=70 C
IDM
PD
10
1.0
0.64
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Unit
V
A
W
o
C
Thermal Resistance Ratings
Parameter
Junction-to-Am bient
Junction-to-Foot (Lead)
a
Surface Mounted on FR4 Board.
Steady Sate
Steady Sate
Symbol
RthJA
RthJF
Typ
125
16
Unit
o
C/W
SP-2111-100 -02 3/24/2014
1

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