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Numéro de référence | CEP01N6G | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
CEP01N6G/CEB01N6G
CEF01N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP01N6G
CEB01N6G
CEF01N6G
VDSS
600V
600V
600V
RDS(ON)
9.3Ω
9.3Ω
9.3Ω
ID @VGS
1A 10V
1A 10V
1A d 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
600
±30
1
4
41
0.33
1d
4d
27
0.22
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
62.5
4.5
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2009.July
http://www.cet-mos.com
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Pages | Pages 4 | ||
Télécharger | [ CEP01N6G ] |
No | Description détaillée | Fabricant |
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