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CEF830G fiches techniques PDF

CET - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CEF830G
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





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CEF830G fiche technique
CEP830G/CEB830G
CEF830G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP830G
CEB830G
VDSS
500V
500V
CEF830G
500V
RDS(ON)
1.5
1.5Ω
1.5
ID @VGS
5A 10V
5A 10V
5A e 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
G
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS
VGS
ID
IDM f
500
±30
5
20
5e
20 e
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
83 42
PD 0.66 0.33
Single Pulsed Avalanche Energy g
EAS 39.2
Single Pulsed Avalanche Current g
Operating and Store Temperature Range
IAS
TJ,Tstg
2.8
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.5
62.5
3.6
65
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2014.Sep.
http://www.cet-mos.com

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