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Numéro de référence | CEP30N15L | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
CEP30N15L/CEB30N15L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
150V, 30A, RDS(ON) = 70mΩ @VGS = 10V.
RDS(ON) = 80mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 150
VGS ±20
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
ID
IDM
30
21
120
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
150
1.2
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
Symbol
RθJC
RθJA
1
Limit
1
50
Units
C/W
C/W
Rev 3. 2010.Dec
http://www.cet-mos.com
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Pages | Pages 4 | ||
Télécharger | [ CEP30N15L ] |
No | Description détaillée | Fabricant |
CEP30N15L | N-Channel Enhancement Mode Field Effect Transistor | CET |
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