DataSheetWiki


CEP30N15L fiches techniques PDF

CET - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CEP30N15L
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





1 Page

No Preview Available !





CEP30N15L fiche technique
CEP30N15L/CEB30N15L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
150V, 30A, RDS(ON) = 70m@VGS = 10V.
RDS(ON) = 80m@VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 150
VGS ±20
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
ID
IDM
30
21
120
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
150
1.2
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
Symbol
RθJC
RθJA
1
Limit
1
50
Units
C/W
C/W
Rev 3. 2010.Dec
http://www.cet-mos.com

PagesPages 4
Télécharger [ CEP30N15L ]


Fiche technique recommandé

No Description détaillée Fabricant
CEP30N15L N-Channel Enhancement Mode Field Effect Transistor CET
CET

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche