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NP82N04MLG fiches techniques PDF

Renesas - N-CHANNEL POWER MOS FET

Numéro de référence NP82N04MLG
Description N-CHANNEL POWER MOS FET
Fabricant Renesas 
Logo Renesas 





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NP82N04MLG fiche technique
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N04MLG, NP82N04NLG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N04MLG and NP82N04NLG are N-channel MOS Field Effect Transistors designed for high current
switching applications.
ORDERING INFORMATION
PART NUMBER
NP82N04MLG-S18-AY Note
NP82N04NLG-S18-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube
50 p/tube
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
FEATURES
Logic level
Built-in gate protection diode
Super low on-state resistance
RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
High current rating
ID(DC) = ±82 A
Low input capacitance
Ciss = 6000 pF TYP.
Designed for automotive application and AEC-Q101 qualified
(TO-220)
(TO-262)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
IAR
EAR
40
±20
±82
±328
143
1.8
175
55 to +175
43
185
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Tch 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19801EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009

PagesPages 8
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