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PDF FDB8160_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDB8160_F085 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDB8160_F085
N-Channel PowerTrench® MOSFET
30V, 80A, 1.8mΩ
October 2010
Features
Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A
Typ Qg(10) = 187nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
Applications
12V Automotive Load Control
Starter/Alternator Systems
Electronic Power Steering Systems
DC/DC converter
TO-263AB
FDB SERIES
©2010 Fairchild Semiconductor Corporation
FDB8160_F085 Rev. C
1
www.fairchildsemi.com
1 page  
Typical Characteristics
3000
1000
100
100us
10
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
1
OPERATION IN THIS
AREA MAY BE
1ms
10ms
0.1 LIMITED BY rDS(on)
100ms DC
1 10 90
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
1000
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0.1 1 10 100 1000 5000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
120 VDD = 5V
80 TJ = 175oC
TJ = -55oC
40
TJ = 25oC
0
0123456
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
7
160
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
120
VGS = 20V
VGS = 10V
VGS = 7V
VGS = 6V
80 VGS = 5V
VGS = 4.5V
VGS = 4V
40
0
0.0 0.5 1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
1.5
8
ID = 80A PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
6
4
TJ = 175oC
2
TJ = 25oC
0
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
1.8
PULSE DURATION = 80μs
1.6 DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8160_F085 Rev. C
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FDB8160_F085.PDF ] | |
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