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K2524-01MR fiches techniques PDF

Fuji Electric - MOSFET ( Transistor ) - 2SK2524-01MR

Numéro de référence K2524-01MR
Description MOSFET ( Transistor ) - 2SK2524-01MR
Fabricant Fuji Electric 
Logo Fuji Electric 





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K2524-01MR fiche technique
2SK2524-01MR
FAP-II Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
N-channel MOS-FET
450V 1Ω 9A 40W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
450
Drain-Gate-Voltage(RGS=20K)
V DGR
450
Continous Drain Current
ID 9
Pulsed Drain Current
I D(puls)
36
Gate-Source-Voltage
V GS
±30
Max. Power Dissipation
P D 40
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=450V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=4,5A
VGS=10V
Forward Transconductance
g fs
ID=4,5A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
t r ID=9A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
t f RGS=10
Avalanche Capability
I AV
L=100µH
Tch=25°C
Continous Reverse Drain Current
I DR
TC=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
450
2,5
3,0
9,0
Typ. Max.
3,0
10
0,87
6,6
1150
130
50
20
50
60
35
3,5
500
1,0
100
1,0
1700
200
75
30
75
90
55
1,1 1,65
550
3,9
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
A
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
62,5 °C/W
3,125 °C/W

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