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PDF FQB10N50CF Data sheet ( Hoja de datos )
| Número de pieza | FQB10N50CF | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQB10N50CF
N-Channel QFET® FRFET® MOSFET
500 V, 10 A, 610 m
October 2013
Features
• 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A
• Low gate charge ( Typ. 45 nC)
• Low Crss ( Typ. 17.5 pF)
• 100% avalanche tested
• Fast recovery body diode
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology
has been especially tailored to reduce on-state resistance, and
to provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and elec-
tronic lamp ballasts.
D
D
G
S
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
-
Continuous
Continuous
(TC
(TC
=
=
25oC)
100oC)
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQB10N50CFTM_WS
500
±30
10
6.35
40
825
10
14.3
2.0
143
1.14
-55 to +150
300
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (1 in2 pad of 2 oz copper), Max.
FQB10N50CFTM_WS
0.87
62.5
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FQB10N50CF Rev. C0
1
www.fairchildsemi.com
1 page  
Figure 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
VGS
VDS
Qgs
IG = co3nmsAt.
DUT
Qg
Qgd
Charge
V10GVS
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
V1G0GVSS
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2010 Fairchild Semiconductor Corporation
FQB10N50CF Rev. C0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FQB10N50CF.PDF ] | |
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