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PDF IRF661TRPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF661TRPbF | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
PD - 97215
IRF6612PbF
IRF661TRPbF
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 2.5mΩ@ 10V 3.4mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
30nC 10nC 2.9nC 8.1nC 18nC 1.8V
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
MX
DirectFET™ ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6612PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6612PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The
IRF6612PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
EAS
IAR
10
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
9 ID = 24A
8
7
6 TJ = 125°C
5
4
3
2 TJ = 25°C
1
0
2 3 4 5 6 7 8 9 10
Max.
30
±20
136
24
19
190
37
19
6.0
5.0 ID= 19A
4.0
VDS = 24V
VDS = 15V
3.0
2.0
1.0
0.0
0
10 20
Units
V
A
mJ
A
30 40
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.20mH, RG = 25Ω, IAS = 19A.
1
05/29/06
1 page  
1000.00
100.00
TJ = 150°C
10.00
TJ = 25°C
VGS = 0V
1.00
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode Forward Voltage
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 11. Maximum Drain Current vs. Case Temperature
150
125
100
IRF6612PbF
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10 100µsec
1msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
01
10msec
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig10. Maximum Safe Operating Area
2.5
2.0
ID = 250µA
1.5
1.0
0.5
0.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 12. Threshold Voltage vs. Temperature
ID
TOP 5.3A
6.2A
BOTTOM 19A
75
50
25
www.irf.com
0
25 50 75 100 125
Starting T J , Junction Temperature (°C)
150
Fig 13. Maximum Avalanche Energy vs. Drain Current
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF661TRPbF.PDF ] | |
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