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Philips - GERMANIUM ALLOY-DIFFUSED TRANSISTOR

Numéro de référence AF178
Description GERMANIUM ALLOY-DIFFUSED TRANSISTOR
Fabricant Philips 
Logo Philips 





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AF178 fiche technique
PHILIPS
TENTATIVE DATA
R.F. GERMANIUM
ALLOY-DIFFUSED TRANSISTOR
Germanium alloy-diffused transistor of the p-n-p type in a metal
case with low noise and high gain up to 260 Mc/s, for use in V . H . F .
applications as amplifier-, oscillator- and converter circuits.
r L I M I T I N G V A L U E S (Absolute max. values)
Collector
Voltage (base reference)
= max.
25 V
Current
= max.
10 mA
Emitter
Reverse current
= max.
1 mA
Base
Current
-Ig = max.
1 mA
Dissipation
Total dissipation
Ptot = max.
110 mW
Temperatures
Storage temperature
Junction temperature
continuous
incidentally (total dura-
tion max. 200 hrs)
THERMAL DATA
1s = -55 °C to+75 °C
iT = max.
T, = max.
= max.
'96 °C
'?9Q° °C
200 hrs)
Thermal resistance from junction
to ambience in free air
K = max. 0.4°C/mW
Shield load-
JANUARY 1964
PHILIPS ELECTRON TUBE DIVISION

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