DataSheetWiki


M29W400DT fiches techniques PDF

Numonyx - 3V supply Flash memory

Numéro de référence M29W400DT
Description 3V supply Flash memory
Fabricant Numonyx 
Logo Numonyx 





1 Page

No Preview Available !





M29W400DT fiche technique
M29W400DT
M29W400DB
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)
3 V supply Flash memory
Features
„ Supply voltage
– VCC = 2.7 V to 3.6 V for Program, Erase
and Read
„ Access time: 45, 55, 70 ns
„ Programming time
– 10 μs per byte/word typical
„ 11 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 8 main blocks
„ Program/Erase controller
– Embedded byte/word program algorithms
„ Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
„ Unlock bypass program command
– Faster production/batch programming
„ Temporary block unprotection mode
„ Low power consumption
– Standby and Automatic Standby
„ 100,000 Program/Erase cycles per block
„ Electronic signature
– Manufacturer code: 0020h
– Top device code M29W400DT: 00EEh
– Bottom device code M29W400DB: 00EFh
– RoHS packages
„ Automotive Device Grade 3
– Temperature: –40 to 125 °C
– Automotive grade certified
SO44 (M)(1)
TSOP48 (N)
12 x 20 mm
FBGA
TFBGA48 (ZA)(1)
6 x 9 mm
FBGA
TFBGA48 (ZE)
6 x 8 mm
1. These packages are no more in mass production.
April 2009
Rev 8
1/48
www.numonyx.com
1

PagesPages 30
Télécharger [ M29W400DT ]


Fiche technique recommandé

No Description détaillée Fabricant
M29W400DB 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory ST Microelectronics
ST Microelectronics
M29W400DB 3V supply Flash memory Numonyx
Numonyx
M29W400DT 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory ST Microelectronics
ST Microelectronics
M29W400DT 3V supply Flash memory Numonyx
Numonyx

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche