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Numéro de référence | BAW56T | ||
Description | High-speed switching diodes | ||
Fabricant | NXP Semiconductors | ||
Logo | |||
1 Page
BAV756S; BAW56 series
High-speed switching diodes
Rev. 6 — 18 March 2015
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
BAV756S
SOT363 SC-88
BAW56
BAW56M
SOT23
SOT883
-
SC-101
BAW56S
SOT363 SC-88
BAW56T
BAW56W
SOT416
SOT323
SC-75
SC-70
JEDEC
-
Package
configuration
very small
TO-236AB small
- leadless ultra
small
- very small
- ultra small
- very small
Configuration
quadruple common
anode/common cathode
dual common anode
dual common anode
quadruple common
anode/common anode
dual common anode
dual common anode
1.2 Features and benefits
High switching speed: trr 4 ns
Low leakage current
Small SMD plastic packages
Low capacitance: Cd 2 pF
Reverse voltage: VR 90 V
AEC-Q101 qualified
1.3 Applications
High-speed switching
General-purpose switching
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
Min Typ
VR = 80 V
-
-
[1] -
-
-
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
Max
0.5
90
4
Unit
A
V
ns
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Pages | Pages 16 | ||
Télécharger | [ BAW56T ] |
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