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PDF NSS60600MZ4 Data sheet ( Hoja de datos )
| Número de pieza | NSS60600MZ4 | |
| Descripción | PNP Transistor | |
| Fabricantes | ON Semiconductor | |
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NSS60600MZ4
60 V, 6.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (VCE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
• Complementary to NSS60601MZ4
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
VCEO
−60 Vdc
Collector-Base Voltage
VCBO
−100
Vdc
Emitter-Base Voltage
VEBO
−6.0
Vdc
Collector Current − Continuous
IC
−6.0
A
Collector Current − Peak
ICM
−12.0
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
−60 VOLTS, 6.0 AMPS
2.0 WATTS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 50 mW
4
1
2
3
SOT−223
CASE 318E
STYLE 1
C 2, 4
B1 E3
MARKING DIAGRAM
AYW
60600G
1
A
Y
W
60600
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
PIN ASSIGNMENT
4
C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 4
1
BCE
123
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NSS60600MZ4/D
1 page  
NSS60600MZ4
TYPICAL CHARACTERISTICS
1.2
1.1 IC/IB = 10
1.0
0.9
0.8
−40°C
0.7
0.6 25°C
0.5
0.4
0.3 150°C
0.2
0.1
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage
10
1.2
1.1 IC/IB = 50
1.0
0.9
0.8 −40°C
0.7
0.6
0.5
25°C
0.4
0.3 150°C
0.2
0.1
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 9. Base−Emitter Saturation Voltage
900
800
700
600
500
400
300
200
100
0
0
TJ = 25°C
ftest = 1 MHz
1234567
VEB, EMITTER BASE VOLTAGE (V)
Figure 10. Input Capacitance
8
180
160
140
120
100
80
60
40
20
0
0
TJ = 25°C
ftest = 1 MHz
10 20 30 40 50 60 70 80 90 100
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 11. Output Capacitance
140
120
TJ = 25°C
ftest = 1 MHz
100 VCE = 10 V
80
60
40
20
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 12. Current−Gain Bandwidth Product
10
100
10
1
0.1
0.01
1
10 ms
1 ms
0.5 ms
100 ms
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
100
http://onsemi.com
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| PDF Descargar | [ Datasheet NSS60600MZ4.PDF ] | |
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