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PDF IRLTS6342TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRLTS6342TRPBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
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VDS
VGS
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
Qg (typical)
ID
(@TA = 25°C)
30
±12
17.5
22.0
11
8.3
V
V
mΩ
mΩ
nC
A
PD - 97730
IRLTS6342PbF
HEXFET® Power MOSFET
D1
D2
G3
6D
5D
4S
TSOP-6
Applications
• System/Load Switch
Features and Benefits
Features
Industry-Standard TSOP-6 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Resulting Benefits
Multi-Vendor Compatibility
⇒ Environmentally Friendlier
Increased Reliability
Orderable part number
IRLTS6342TRPBF
Package Type
TSOP-6
Standard Pack
Form
Quantity
Tape and Reel
3000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ 4.5V
cPulsed Drain Current
ePower Dissipation
ePower Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Max.
30
±12
8.3
6.7
64
2.0
1.3
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 2
www.irf.com
1
9/27/11
1 page  
45
40 ID = 8.0A
35
30
25
20 TJ = 125°C
15
10
TJ = 25°C
5
1 2 3 4 5 6 7 8 9 10 11 12
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
100
90 ID
80
TOP
0.9A
1.5A
70 BOTTOM 6.4A
60
50
40
30
20
10
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
IRLTS6342PbF
70
60
50
40
30
Vgs = 2.5V
20
10 Vgs = 4.5V
0
0 10 20 30 40 50
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
16000
12000
8000
4000
0
1E-8
1E-7
1E-6 1E-5
Time (sec)
1E-4
1E-3
Fig 15. Typical Power vs. Time
+
-
RG
www.irf.com
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD +
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRLTS6342TRPBF.PDF ] | |
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