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Numéro de référence | BC308 | ||
Description | EPITAXIAL PLANAR PNP TRANSISTOR | ||
Fabricant | KEC | ||
Logo | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
High Voltage : BC307 VCEO=-45V.
Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.)
(VCE=-6V, IC=-0.1mA, f=1kHz).
For Complementary With NPN type BC237/238/239.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
BC307
Collector-Base Voltage
BC308
BC309
BC307
Collector-Emitter Voltage
BC308
BC309
BC307
Emitter-Base Voltage
BC308
BC309
BC307
Collector Current
BC308
BC309
BC307
Emitter Current
BC308
BC309
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
RATING
-50
-30
-30
-45
-25
-20
-5
-5
-5
-100
-100
-50
100
100
50
625
150
-55 150
UNIT
V
V
V
mA
mA
mW
BC307/8/9
EPITAXIAL PLANAR PNP TRANSISTOR
BC
KE
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. COLLECTOR
2. BASE
3. EMITTER
TO-92
1994. 3. 2
Revision No : 0
1/2
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Pages | Pages 2 | ||
Télécharger | [ BC308 ] |
No | Description détaillée | Fabricant |
BC300 | (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS | CDIL |
BC300 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | Micro Electronics |
BC301 | (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS | CDIL |
BC301 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | Micro Electronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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