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PDF 6R099C6 Data sheet ( Hoja de datos )
| Número de pieza | 6R099C6 | |
| Descripción | Metal Oxide Semiconductor Field Effect Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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 1. Dataheet - 600V MOSFET Transistor  Hay una vista previa y un enlace de descarga de 6R099C6 (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
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MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
600V CoolMOS™ C6 Power Transistor
IPx60R099C6
Data Sheet
www.DataSRheeetv4.U2.c.o1m, 2010-02-09
Final
Industrial & Multimarket
1 page  
3 Thermal characteristics
600V CoolMOS™ C6 Power Transistor
IPx60R099C6
Thermal characteristics
Table 3 Thermal characteristics TO-220 (IPP60R099C6),TO-247 (IPW60R099C6)
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Thermal resistance, junction - case RthJC
-
-
0.45 °C/W
Thermal resistance, junction -
RthJA
-
-
62
ambient
leaded
Soldering temperature,
Tsold
-
-
260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
from case for 10 s
leads
Table 4 Thermal characteristics TO-220FullPAK (IPA60R099C6)
Parameter
Symbol
Values
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
-
-
3.6
Thermal resistance, junction -
RthJA
-
-
80
ambient
Soldering temperature,
Tsold
-
-
260
wavesoldering only allowed at
leads
Unit Note /
Test Condition
°C/W
leaded
°C 1.6 mm (0.063 in.)
from case for 10 s
Table 5 Thermal characteristics TO-263 (IPB60R099C6)
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Thermal resistance, junction - case RthJC
-
-
0.45 °C/W
Thermal resistance, junction -
RthJA
-
-
62
ambient
SMD version, device
on PCB, minimal
footprint
- 35 -
SMD version, device
on PCB, 6cm2 cooling
area1)
Soldering temperature,
Tsold
-
-
260 °C reflow MSL1
wave- & reflow soldering allowed
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
www.DataSheet4U.com
Final Data Sheet
5 Rev. 2.1, 2010-02-09
5 Page 
Table 16
Typ. transfer characteristics
600V CoolMOS™ C6 Power Transistor
IPx60R099C6
Electrical characteristics diagrams
Typ. gate charge
ID=f(VGS); VDS=20V
Table 17
Avalanche energy
VGS=f(Qgate), ID=18.1 A pulsed
Drain-source breakdown voltage
www.DataSheet4U.com
EAS=f(Tj); ID=6.6 A; VDD=50 V
Final Data Sheet
VBR(DSS)=f(Tj); ID=0.25 mA
11 Rev. 2.1, 2010-02-09
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet 6R099C6.PDF ] | |
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