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PDF FSR1110R4 Data sheet ( Hoja de datos )
| Número de pieza | FSR1110R4 | |
| Descripción | Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
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Data Sheet
FSR1110D, FSR1110R
March 2000 File Number 4828.1
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSR1110D1
100K
TXV
FSR1110R3
100K
Space
FSR1110R4
Formerly available as type TA45032.
Symbol
D
G
S
Features
• 1.0A, 100V, rDS(ON) = 0.680Ω
• Contains Four Isolated and Independent N-Channel
MOSFETs
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 0.3nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Packaging
14 PIN DIP
Pinout
D3 1
S3 2
G3 3
NC 4
G4 5
S4 6
D4 7
14 D2
13 S2
12 G2
11 NC
10 G1
9 S1
8 D1
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
FSR1110D, FSR1110R
Typical Performance Curves (Continued)
10
THERMAL MATRIX
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
0.001
10-4
10-3
SINGLE PULSE
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
t1
t2
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
102
T1 P1 .73P2 .73P3 .73P4
T2
.73P1
P2 .73P3 .73P4
=
T3 .73P1 .73P2
P3 .73P4 * [R0_JA]
T4
.73P1 .73P2 .73P3
P4
103
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
10
1 STARTING TJ = 150oC
STARTING TJ = 25oC
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
0.01
0.1 1
tAV, TIME IN AVALANCHE (ms)
10
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FSR1110R4.PDF ] | |
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