VVZ40-12io1 Datasheet PDF - IXYS
| Part Number | VVZ40-12io1 | |
| Description | Thyristor Module | |
| Manufacturers | IXYS | |
| Logo |  |
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Thyristor Module
3~ Rectifier Bridge, half-controlled (high-side)
Part number
VVZ40-12io1
VVZ40-12io1
3~
Rectifier
VRRM =
I DAV =
I FSM =
1200
45
320
8 475 2
1
6
3
Features / Advantages:
● Package with DCB ceramic base plate
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Line rectifying 50/60 Hz
● Drives
● SMPS
● UPS
Backside: isolated
Package: V1-B-Pack
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140310e
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VVZ40-12io1
Thyristor
60
300
600
50
40
IF
30
[A]
20
TVJ = 125°C
TVJ = 25°C
IFSM 200
[A]
TVJ = 45°C
TVJ = 125°C
500
400
I2t
300
[A2s]
200
TVJ= 45°C
TVJ= 125°C
10
0
0.0 0.5 1.0 1.5 2.0
VF [V]
Fig. 1 Forward current vs.
voltage drop per thyristor
50Hz, 80% VRRM
100
0.001
0.01
0.1
t [s]
1
Fig. 2 Surge overload current
vs. time per thyristor
100
0
1 2 3 4 5 6 789
t [ms]
Fig. 3 I2t vs. time per thyristor
10
1: IGD, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
1000
TVJ = 25°C
VG
1
[V]
1
45
23
6
100
tgd
[μs]
10
typ. Limit
4: PGAV = 0.5 W
5: PGM = 1 W
6: PGM = 10 W
0.1
100 101 102 103 104
IG [mA]
Fig. 4 Gate trigger characteristics
1
10 100 1000
IG [mA]
Fig. 5 Gate trigger delay time
60
50
40
IT(AV)M
30
[A]
20
DC =
1
0.5
0.4
0.33
0.17
0.08
10
0
0 50 100 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per thyristor
25
DC =
1
0.5
20 0.4
0.33
0.17
15 0.08
Ptot
[W] 10
5
RthHA:
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
0
0 5 10 15 20 0
IT(AV)M [A]
50 100
Tamb [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per thyristor
150
1.2
1.0
0.8
ZthJC
0.6
[K/W]
0.4
0.2
0.0
1
Constants for ZthJC calc.:
i Rth (K/W)
1 0.020
2 0.100
3 0.210
4 0.410
5 0.260
ti (s)
0.0004
0.0090
0.0140
0.0500
0.3600
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
vs. time per thyristor
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140310e
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