VUO190-16NO7 Datasheet PDF - IXYS
| Part Number | VUO190-16NO7 | |
| Description | Standard Rectifier Module | |
| Manufacturers | IXYS | |
| Logo |  |
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There is a preview and VUO190-16NO7 download ( pdf file ) link at the bottom of this page. Total 5 Pages | ||
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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO190-16NO7
B- C~ D~ E~ A+
VUO190-16NO7
3~
Rectifier
VRRM =
I DAV =
I FSM =
1600 V
240 A
2800 A
Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: PWS-E
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130328a
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VUO190-16NO7
Rectifier
240
200
2500
50Hz, 80% VRRM
160
IF 120
[A] 80
40 TVJ = 150°C
TVJ = 125°C
0
0.5
TVJ = 25°C
1.0 1.5
VF [V]
Fig. 1 Forward current vs.
voltage drop per diode
2000
IFSM
[A]
1500
TVJ = 45°C
TVJ = 150°C
1000
0.001
0.01 0.1
t [s]
1
Fig. 2 Surge overload current
vs. time per diode
105
50 Hz
0.8 x V RRM
104
[A2s]
TVJ= 45°C
TVJ= 150°C
103
1
2 3 4 5 6 789
t [ms]
Fig. 3 I2t vs. time per diode
100
80
60
Ptot
40
[W]
DC =
1
0.5
0.4
0.33
0.17
0.08
20
RthA:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
0
0 20 40 60 80 100 0 25 50 75 100 125 150 175
IdAVM [A]
Tamb [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
1
280
240
200
IdAV
160
[A] 120
DC =
1
0.5
0.4
0.33
0.17
0.08
80
40
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
0.1
ZthJC
[K/W]
0.01
0.001
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Ri
0.050
0.003
0.100
0.177
0.070
ti
0.02
0.01
0.225
0.8
0.58
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130328a
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| Part Number | Description | MFRS |
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