VUO125-18NO7 Datasheet PDF - IXYS
| Part Number | VUO125-18NO7 | |
| Description | Standard Rectifier Module | |
| Manufacturers | IXYS | |
| Logo |  |
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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO125-18NO7
- ~~~ +
VUO125-18NO7
3~
Rectifier
VRRM =
I DAV =
I FSM =
1800 V
150 A
1800 A
Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: PWS-C
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130612a
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VUO125-18NO7
Rectifier
200
160
IF 120
[A] 80
TVJ =
125°C
40 150°C
TVJ = 25°C
0
0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
1400
1200
IFSM
1000
[A]
800
50 Hz
0.8 x V RRM
TVJ = 45°C
TVJ = 150°C
18000
VR = 0 V
15000
I2t
12000
[A2s]
9000
TVJ = 45°C
6000
TVJ = 150°C
10-3
10-2
10-1
100
t [s]
Fig. 2 Surge overload current
vs. time per diode
3000
1
t [ms]
10
Fig. 3 I2t versus time per diode
70
60
50
Ptot 40
[W] 30
20
DC =
1
0.5
0.4
0.33
0.17
0.08
RthJA:
0.2 KW
0.4 KW
0.6 KW
0.8 KW
1.0 KW
2.0 KW
10
0
0 10 20 30 40 50 60 0
IF(AV)M [A]
25 50 75 100 125 150
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
200
160
IF(AV)M
120
[A]
80
DC =
1
0.5
0.4
0.33
0.17
0.08
40
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
0.6
0.4
ZthJC
[K/W]
0.2
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
1 0.060
2 0.003
3 0.150
4 0.243
5 0.144
ti (s)
0.020
0.010
0.225
0.800
0.580
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130612a
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