VUO110-08NO7 Datasheet PDF - IXYS
| Part Number | VUO110-08NO7 | |
| Description | Standard Rectifier Module | |
| Manufacturers | IXYS | |
| Logo |  |
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There is a preview and VUO110-08NO7 download ( pdf file ) link at the bottom of this page. Total 5 Pages | ||
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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO110-08NO7
B- C~ D~ E~ A+
VUO110-08NO7
3~
Rectifier
VRRM =
I DAV =
I FSM =
800 V
125 A
1200 A
Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: PWS-E
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130410b
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VUO110-08NO7
Rectifier
200
160
120
IF
80
[A]
T
VJ
=
150°C
40
TVJ = 125°C
TVJ = 25°C
0
0.5 1.0 1.5
VF [V]
Fig. 1 Forward current vs.
voltage drop per diode
1000
50Hz, 80% VRRM
800
IFSM
[A]
600
TVJ = 45°C
TVJ = 150°C
400
0.001
0.01
0.1
t [s]
1
Fig. 2 Surge overload current
vs. time per diode
104
50 Hz
0.8 x V RRM
[A2s]
TVJ= 45°C
TVJ= 150°C
103
1
2 3 4 5 6 7 89
t [ms]
Fig. 3 I2t vs. time per diode
50
40
Ptot
30
[W]
DC =
1
0.5
0.4
0.33
0.17
0.08
20
RthA:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
10
0
0 10 20 30 40 50 0 25 50 75 100 125 150 175
IFAV [A]
Tamb [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0.8
160
120
IFAVM
80
[A]
40
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
0.6
ZthJC
0.4
[K/W]
0.2
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Ri
0.100
0.010
0.162
0.258
0.170
ti
0.020
0.010
0.225
0.800
0.580
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130410b
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| Part Number | Description | MFRS |
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