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Numéro de référence | 52N15D | ||
Description | IRFB52N15D | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
PD - 94357A
SMPS MOSFET
IRFB52N15D
IRFS52N15D
IRFSL52N15D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
RDS(on) max
0.032Ω
ID
60A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB52N15D
D2Pak
TO-262
IRFS52N15D IRFSL52N15D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
Notes through are on page 11
www.irf.com
Max.
60
43
240
3.8
320
2.1
± 30
5.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
0.50
–––
–––
Max.
0.47
–––
62
40
Units
°C/W
1
06/25/02
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Pages | Pages 11 | ||
Télécharger | [ 52N15D ] |
No | Description détaillée | Fabricant |
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