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WNM2306 fiches techniques PDF

Will Semiconductor - N-Channel Power MOSFET / Transistor

Numéro de référence WNM2306
Description N-Channel Power MOSFET / Transistor
Fabricant Will Semiconductor 
Logo Will Semiconductor 





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WNM2306 fiche technique
WNM2306
N-Channel, 20V, 3.2A, Power MOSFET
WNM2306
Http://www.willsemi.com
V(BR)DSS
20
Rds(on)
(Max. mŸ)
45 @ 4.5V
55 @ 2.5V
66 @ 1.8V
Descriptions
The WNM2306 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench technology
and design to provide excellent RDS (ON) with low gate
charge. This device is suitable for use in DC-DC
conversion and power switch applications. Standard
Product WNM2306 is Pb-free.
Features
SOT-23
D
3
12
GS
Configuration (Top View)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
WT6*
WT6
*
= Device Code
= Month (A~Z)
Marking
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
Order Information
Device
Package
WNM2306-3/TR SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 Dec,2011 - Rev.2.3

PagesPages 6
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