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PDF NTMFS4931NT1G Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4931NT1G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4931N
Power MOSFET
30 V, 246 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Improve Conduction and Overall Efficiency
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• OR−ing FET, Power Load Switch, Motor Control
• Refer to Application Note AND8195/D for Mounting Information
End Products
• Motor Control, UPS, Fault−Tolerant Power Systems, Hot Swap
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
VDSS 30 V
VGS
±20 V
TA = 25°C
ID
40 A
TA = 100°C
25
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
2.74 W
77 A
48
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
10.2 W
23 A
15
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
TC = 25°C
TC =100°C
PD
ID
0.95 W
246 A
156
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TA = 25°C, tp = 10 ms
PD
IDM
104 W
490 A
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 41 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TJ,
TSTG
IS
dV/dt
EAS
−55 to
+150
100
4.4
252
°C
A
V/ns
mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
1.1 mW @ 10 V
1.5 mW @ 4.5 V
D (5,6)
ID MAX
246 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
SD
S 4931N
S AYWZZ
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
NTMFS4931NT1G
Package
SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTMFS4931NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 1
1
Publication Order Number:
NTMFS4931N/D
1 page  
NTMFS4931N
TYPICAL CHARACTERISTICS
13000
12000
11000
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
0
TJ = 25°C
Ciss VGS = 0 V
Coss
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
10000
1000
VDD = 15 V
ID = 15 A
VGS = 10 V
100
10
td(off)
tf
tr
td(on)
10
9 TJ = 25°C
8
QT
7
6
5
4
3 QGS QGD
2 VDD = 15 V
1 VGS = 10 V
ID = 30 A
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
VGS = 0 V
25
20
TJ = 125°C
15
10
TJ = 25°C
5
10
1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
1000
10 ms
100
100 ms
1 ms
10
10 ms
1 0 V < VGS < 10 V
SINGLE PULSE
TC = 25°C
0.1 RDS(on) LIMIT
THERMAL LIMIT
0.01
0.01
PACKAGE LIMIT
0.1 1
100 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
260
240 ID = 41 A
220
200
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
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| PDF Descargar | [ Datasheet NTMFS4931NT1G.PDF ] | |
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