(PDF) CEM3252L Datasheet - N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CEM3252L
Descripción	N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	Chino-Excel Technology
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No Preview Available ! CEM3252L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 8A, RDS(ON) = 29mΩ @VGS = 10V. RDS(ON) = 36mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 5 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 7.3 IDM 28 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 2. 2007.Aug. http://www.cet-mos.com 1 page

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PDF CEM3252L Data sheet ( Hoja de datos )