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Fairchild Semiconductor - HGTG10N120BND

Numéro de référence 10N120BND
Description HGTG10N120BND
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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10N120BND fiche technique
Data Sheet
HGTG10N120BND
December 2001
35A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG10N120BND is a Non-Punch Through (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor. The IGBT used
is the development type TA49290. The Diode used is the
development type TA49189.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49302.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG10N120BND
TO-247
10N120BND
NOTE: When ordering, use the entire part number.
Features
• 35A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
Symbol
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG10N120BND Rev. B

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