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Número de pieza | 7N60H | |
Descripción | N-CHANNEL MOSFET | |
Fabricantes | KIA | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 7N60H (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SEMICONDUCTORS
7.0A,600V
N-CHANNEL MOSFET
7N60H
1.Description
This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This
advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switched mode power supplies, active power factor correction
based on half bridge topology.
2. Features
RDS(on)=1.0Ω @ VGS=10V
Ultra low gate charge (typical 27nC)
Low reverse transfer capacitance
Fast switching capability
Avalanche energy tested
Improved dv/dt capability, high ruggedness
3. Pin configuration
Pin
1
2
3
4
1 of 6
Function
Gate
Drain
Source
Drain
Rev 1.1 JAN 2014
1 page KIA
SEMICONDUCTORS
7.0A,600V
N-CHANNEL MOSFET
7N60H
5 of 6
Rev 1.1 JAN 2014
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 7N60H.PDF ] |
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