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FSL9110D fiches techniques PDF

Intersil Corporation - 2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

Numéro de référence FSL9110D
Description 2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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FSL9110D fiche technique
Data Sheet
FSL9110D, FSL9110R
October 1998 File Number 4225.3
2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR
Resistant, P-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSL9110D1
10K TXV
FSL9110D3
100K
Commercial
FSL9110R1
100K
TXV
FSL9110R3
100K
Space
FSL9110R4
Features
• 2.5A, -100V, rDS(ON) = 1.30
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 0.3nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Symbol
D
G
S
Package
TO-205AF
G
DS
4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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FSL9110D 2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs Intersil Corporation
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FSL9110R 2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs Intersil Corporation
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