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Mitsubishi - 256M Double Data Rate Synchronous DRAM

Numéro de référence M2S56D20ATP
Description 256M Double Data Rate Synchronous DRAM
Fabricant Mitsubishi 
Logo Mitsubishi 





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M2S56D20ATP fiche technique
DDR SDRAM (Rev.1.2)
Jun. '01 Preliminary
MITSUBISHI LSIs
M2S56D20/ 30/ 40ATP
256M Double Data Rate Synchronous DRAM
PRELIMINARY
Some of contents are subject to change without notice.
DESCRIPTION
M2S56D20ATP is a 4-bank x 16,777,216-word x 4-bit,
M2S56D30ATP is a 4-bank x 8,388,608-word x 8-bit,
M2S56D40ATP is a 4-bank x 4,194,304-word x 16-bit,
double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are
referenced to the rising edge of CLK. Input data is registered on both edges of data strobe, and output
data and data strobe are referenced on both edges of CLK. The M2S56D20/30/40ATP achieves very
high speed data rate up to 133MHz, and are suitable for main memory in computer systems.
FEATURES
- Vdd=Vddq=2.5V+0.2V
- Double data rate architecture;
two data transfers per clock cycle
- Bidirectional, data strobe (DQS) is transmitted/received with data
- Differential clock inputs (CLK and /CLK)
- DLL aligns DQ and DQS transitions
with CLK transitions edges of DQS
- Commands entered on each positive CLK edge;
- data and data mask referenced to both edges of DQS
- 4 bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2.0/2.5 (programmable)
- Burst length- 2/4/8 (programmable)
- Burst type- sequential / interleave (programmable)
- Auto precharge / All bank precharge controlled by A10
- 8192 refresh cycles /64ms (4 banks concurrent refresh)
- Auto refresh and Self refresh
- Row address A0-12 / Column address A0-9,11(x4)/ A0-9(x8)/ A0-8(x16)
- SSTL_2 Interface
- 400-mil, 66-pin Thin Small Outline Package (TSOP II)
- JEDEC standard
Operating Frequencies
Speed
Grade
-75A
-75
-10
Clock Rate
CL=2 *
133MHz
CL=2.5 *
133MHz
100MHz 133MHz
100MHz 125MHz
* CL = CAS(Read) Latency
MITSUBISHI ELECTRIC
1

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