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RJK4532DPH-E0 fiches techniques PDF

Renesas - High Speed Power Switching MOS FET

Numéro de référence RJK4532DPH-E0
Description High Speed Power Switching MOS FET
Fabricant Renesas 
Logo Renesas 





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RJK4532DPH-E0 fiche technique
RJK4532DPH-E0
450V - 4A - MOS FET
High Speed Power Switching
Features
Low on-state resistance
RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25C)
Low drive current
High speed switching
Outline
RENESAS Package code: PRSS0004ZJ-B
(Package name: TO-251)
4
G
12 3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse) Note1
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IDR
Note1
(pulse)
IAP Note3
EAR Note3
Pch Note 2
Channel to case thermal Impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
Preliminary Datasheet
R07DS1038EJ0100
Rev.1.00
Mar 15, 2013
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
450
30
4
16
4
16
3
0.5
40.3
3.1
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS1038EJ0100 Rev.1.00
Mar 15, 2013
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