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NP82N055NUG fiches techniques PDF

NEC - N-CHANNEL POWER MOS FET

Numéro de référence NP82N055NUG
Description N-CHANNEL POWER MOS FET
Fabricant NEC 
Logo NEC 





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NP82N055NUG fiche technique
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N055MUG, NP82N055NUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N055MUG and NP82N055NUG are N-channel MOS Field Effect Transistors designed for high current
switching applications.
ORDERING INFORMATION
PART NUMBER
NP82N055MUG-S18-AY Note
NP82N055NUG-S18-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube
50 p/tube
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
FEATURES
Non logic level
Super low on-state resistance
RDS(on) = 6.0 mΩ MAX. (VGS = 10 V, ID = 41 A)
High current rating
ID(DC) = ±82 A
Low input capacitance
Ciss = 6400 pF TYP.
Designed for automotive application and AEC-Q101 qualified
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
IAR
EAR
55
±20
±82
±328
143
1.8
175
55 to +175
38
144
V
V
A
A
W
W
°C
°C
A
mJ
(TO-220)
(TO-262)
Notes 1. PW 10 μs, Duty Cycle 1%
2. Tch 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19804EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009

PagesPages 7
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