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MBR1635 fiches techniques PDF

ON Semiconductor - Switch Mode Power Rectifiers

Numéro de référence MBR1635
Description Switch Mode Power Rectifiers
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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MBR1635 fiche technique
MBR1635, MBR1645,
MBRB1645, NRVBB1645
Switch Mode
Power Rectifiers
16 A, 35 and 45 V
These state−of−the−art devices use the Schottky Barrier principle
with a platinum barrier metal.
Features
Guard−ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 Grams for TO−220
1.7 Grams for D2PAK
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR1635
MBR1645
MBRB1645
VRRM
VRWM
VR
35
45
45
V
Average Rectified Forward Current Delay IF(AV)
A
(Rated VR, TC = 163°C) Total Device
16
Peak Repetitive Forward Current, Per
IFRM
32
A
Leg
(Rated VR, Square Wave,
20 kHz, TC = 157°C) Total Device
Non−Repetitive Peak Surge Current
IFSM 150 A
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current
IRRM
1.0
A
(2.0 ms, 1.0 kHz)
Storage Temperature Range
Tstg −65 to +175 °C
Operating Junction Temperature (Note 1) TJ −65 to +175 °C
Voltage Rate of Change (Rated VR)
dv/dt
10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
http://onsemi.com
MARKING
4 DIAGRAMS
13
3
TO−220AC
CASE 221B
PLASTIC
1, 4
AYWWG
B16x5
KA
A
Y
WW
B16x5
x
KA
G
= Assembly Location
= Year
= Work Week
= Device Code
= 3 or 4
= Diode Polarity
= Pb−Free Package
1
3
D2PAK
4 CASE 418B
STYLE 3
B1645G
AYWW
1
4
3
B1645
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MBR1635G
TO−220
(Pb−Free)
50 Units / Rail
MBR1645G
TO−220
(Pb−Free)
MBRB1645T4G
D2PAK
(Pb−Free)
NRVBB1645T4G D2PAK
(Pb−Free)
50 Units / Rail
800 Units / Rail
800 Units / Rail
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 12
1
Publication Order Number:
MBR1635/D

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