DataSheetWiki


FSL13A0R fiches techniques PDF

Intersil Corporation - 9A/ 100V/ 0.180 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

Numéro de référence FSL13A0R
Description 9A/ 100V/ 0.180 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
Fabricant Intersil Corporation 
Logo Intersil Corporation 





1 Page

No Preview Available !





FSL13A0R fiche technique
Data Sheet
FSL13A0D, FSL13A0R
June 1999 File Number 4480.2
9A, 100V, 0.180 Ohm, Rad Hard, SEGR
Resistant, N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSL13A0D1
10K TXV
FSL13A0D3
100K
Commercial
FSL13A0R1
100K
TXV
FSL13A0R3
100K
Space
FSL13A0R4
Formerly available as type TA17696.
Features
• 9A, 100V, rDS(ON) = 0.180
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 1.5nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Symbol
D
Package
G
S
TO-205AF
DG S
4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

PagesPages 8
Télécharger [ FSL13A0R ]


Fiche technique recommandé

No Description détaillée Fabricant
FSL13A0D 9A/ 100V/ 0.180 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
FSL13A0R 9A/ 100V/ 0.180 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche