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PDF ZXTP25012EZ Data sheet ( Hoja de datos )
| Número de pieza | ZXTP25012EZ | |
| Descripción | 20V PNP high gain transistor | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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ZXTP25012EZ
20V PNP high gain transistor in SOT89
Summary
BVCEO > -12V
hFE > 500
IC(cont) = 4.5A
VCE(sat) < -70mV @ 1A
RCE(sat) = 45m⍀
PD = 2.4W
Complementary part number ZXTN25012EZ
Description
Packaged in the SOT89 outline this new low saturation 12V PNP
transistor offers extremely low on state losses making it ideal for use
in DC-DC circuits and various driving and power management
functions.
Features
• 4.5A continuous current
• Up to 10A peak current
• Very low saturation voltages
• High gain
B
C
E
Applications
• High side switch
• Battery charging
• Regulator circuits
• Buck converters
• MOSFET gate drivers
Ordering information
Device
ZXTP25012EZTA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
1000
E
CC
B
Pinout - top view
Device marking
• 1L4
Issue 1- December 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
1 page  
ZXTP25012EZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-Base breakdown BVCBO
voltage
Collector-Emitter
breakdown voltage
BVCEO
Emitter-Base breakdown BVEBO
voltage
Collector-Base cut-off
current
ICBO
Emitter Base cut-off
current
Collector-Emitter
saturation voltage
IEBO
VCE(sat)
Min.
-12
-12
-7
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
VBE(sat)
VBE(on)
hFE
500
300
40
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
fT
Cibo
Cobo
td
tr
ts
tf
Typ. Max. Unit Conditions
-35 V IC = -100μA
-25 V IC= -10mA (*)
-8.5 V IE = -100μA
<-1 -50 nA VCB = -12V
-0.5 μA VCB = -12V, Tamb=100°C
<-1 -50 nA VEB = -5.6V
-55
-155
-185
-200
-990
-70
-265
-355
-285
-1100
mV IC = -1A, IB = -100mA(*)
mV IC = -1A, IB = -10mA(*)
mV IC = -2A, IB = -40mA(*)
mV IC = -4.5A, IB = -450mA(*)
mV IC = -4.5A, IB = -450mA(*)
-865
800
450
85
15
310
127
16.9
41
62
179
65
-975
1500
250
30
mV IC = -4.5A, VCE = -2V(*)
MHz
pF
pF
ns
ns
ns
ns
IC = -10mA, VCE = -2V(*)
IC = -1A, VCE = -2V(*)
IC = -4.5A, VCE = -2V(*)
IC = -10A, VCE = -2V(*)
IC = -50mA, VCE = -10V
f = 100MHz
VEB = -0.5V, f = 1MHz(*)
VCB = -10V, f = 1MHz(*)
VCC = -10V, IC = -1A,
IB1 = -IB2 = -10mA
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Issue 1- December 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ZXTP25012EZ.PDF ] | |
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