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PDF ZXTP19060CZ Data sheet ( Hoja de datos )
| Número de pieza | ZXTP19060CZ | |
| Descripción | 60V PNP medium transistor | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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ZXTP19060CZ
60V PNP medium transistor in SOT89
Summary
BVCEO > -60V
BVECO > -7V
IC(cont) = 4.5A
VCE(sat) < -80mV @ -1A
RCE(sat) = 50m⍀
PD = 2.4W
Complementary part number ZXTN19060CZ
Description
Packaged in the SOT89 outline this new low saturation PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
Features
• High gain
• Low saturation voltage
• High peak current
• 7V reverse blocking voltage
B
C
E
Applications
• High side driver
• Motor drive
• Load disconnect switch
Ordering information
Device
ZXTP19060CZTA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
1000
E
CC
B
Pinout - top view
Device marking
1M2
Issue 1- February 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
1 page  
ZXTP19060CZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
Symbol
BVCBO
BVCEO
BVECX
BVECO
BVEBO
ICBO
Emitter cut-off current
Collector-Emitter
saturation voltage
IEBO
VCE(sat)
Min.
-60
-60
-7
-7
-7
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
Transition frequency
VBE(sat)
VBE(on)
hFE
fT
200
160
25
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
Cibo
Cobo
td
tr
ts
tf
Typ.
-110
-90
-8.4
-8.8
Max.
Unit Conditions
V IC = -100µA
V IC= -10mA (*)
V IE = -100µA, RBC < 1kΩ or
0.25V > VBC > -0.25V
V IE = -100µA
-8.4
<1
<1
-62
-150
-500
-105
-145
-240
-965
-875
330
260
45
180
280
29.5
24.3
13.2
456
68.2
-50
-0.5
-50
-80
-205
-750
-165
-200
-410
-1050
-1000
500
400
40
V IE = -100µA
nA VCB = -60V
µA VCB = -60V, Tamb=100°C
nA VEB = -5.6V
mV IC = -1A, IB = -100mA(*)
mV IC = -1A, IB = -20mA(*)
mV IC = -2A, IB = -40mA(*)
mV IC = -2A, IB = -200mA(*)
mV IC = -3A, IB = -300mA(*)
mV IC = -4.5A, IB = -450mA(*)
mV IC = -4.5A, IB = -450mA(*)
mV IC = -4.5A, VCE = -2V(*)
MHz
pF
pF
ns
ns
ns
ns
IC = -100mA, VCE = -2V(*)
IC = -1A, VCE = -2V(*)
IC = -4.5A, VCE = -2V(*)
IC = -50mA, VCE = -10V
f = 50MHz
VEB = -0.5V, f = 1MHz(*)
VCB = -10V, f = 1MHz(*)
IC = -500mA, VCC = -10V,
IB1 = -IB2 = -50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Issue 1- February 2008
© Zetex Semiconductors plc 2008
5
www.zetex.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ZXTP19060CZ.PDF ] | |
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