FSJ055D1 Datasheet PDF - Intersil Corporation
| Part Number | FSJ055D1 | |
| Description | 70A/ 60V/ 0.012 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs | |
| Manufacturers | Intersil Corporation | |
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Data Sheet
FSJ055D, FSJ055R
October 1999 File Number 4250.5
70A, 60V, 0.012 Ohm, Radiation Hardened,
SEGR Resistant, N-Channel Power
MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSJ055D1
10K TXV
FSJ055D3
100K
Commercial
FSJ055R1
100K
TXV
FSJ055R3
100K
Space
FSJ055R4
Features
• 70A, 60V, rDS(ON) = 0.012Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 6.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for
3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Symbol
D
Packaging
G
S
TO-254AA
G
S
D
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 407-727-9207 | Copyright © Intersil Corporation 1999
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FSJ055D, FSJ055R
Typical Performance Curves (Continued)
10
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
10-5
10-4
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
PDM
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
500
t1
t2
100
100
STARTING TJ = 150oC
STARTING TJ = 25oC
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
10
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
101
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FSJ055D1 electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FSJ055D1.PDF Datasheet ] | |
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