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NP82N04PDG fiches techniques PDF

Renesas - N-CHANNEL POWER MOS FET

Numéro de référence NP82N04PDG
Description N-CHANNEL POWER MOS FET
Fabricant Renesas 
Logo Renesas 





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NP82N04PDG fiche technique
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N04PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
NP82N04PDG-E1-AY
Pure Sn (Tin)
NP82N04PDG-E2-AY
PACKING
Tape
800 p/reel
PACKAGE
TO-263 (MP-25ZP)
typ. 1.5 g
FEATURES
Super low on-state resistance
RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
Low Ciss Ciss = 6000 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±82
±328
Total Power Dissipation (TC = 25°C)
PT1 143
Total Power Dissipation (TA = 25°C) PT2 1.8
Channel Temperature
Tch 175
Storage Temperature
Tstg 55 to +175
Repetitive Avalanche Current Note2
IAR 43
Repetitive Avalanche Energy Note2
EAR 185
Notes 1. PW 10 μs, Duty Cycle 1%
2. Tch 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18396EJ1V0DS00 (1st edition)
Date Published September 2006 NS CP(K)
Printed in Japan
2006

PagesPages 7
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