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PDF FSGYC260R3 Data sheet ( Hoja de datos )
| Número de pieza | FSGYC260R3 | |
| Descripción | Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
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TM
Data Sheet
FSGYC260R
May 2000 File Number 4851.1
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFET
Intersil Star*Power Rad Hard
TM MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low rDS(ON) and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
Gold FETs combine this electrical capability with total dose
radiation hardness up to 100K RADs while maintaining the
guaranteed performance for SEE (Single Event Effects)
which the Intersil FS families have always featured.
The Intersil family of Star*Power FETs includes a series of
devices in various voltage, current and package styles. The
portfolio consists of Star*Power and Star*Power Gold
products. Star*Power FETs are optimized for total dose and
rDS(ON) while exhibiting SEE capability at full rated voltage
up to an LET of 37. Star*Power Gold FETS have been
optimized for SEE and Gate Charge combining SEE
performance to 80% of the rated voltage for an LET of 82
with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-S-19500.
Formerly available as type TA45231W.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Engineering Samples FSGYC260D1
100K
TXV
FSGYC260R3
100K
Space
FSGYC260R4
Features
• 56A, 200V, rDS(ON) = 0.033Ω
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 82MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 5V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IAS
• Photo Current
- 17nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Symbol
D
G
S
Packaging
SMD2
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Star*Power™ is a trademark of Intersil Corporation.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
1 page  
FSGYC260R
Performance Curves Unless Otherwise Specified (Continued)
10
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
PDM
100
t1 t2
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
300
100 STARTING TJ = 25oC
101
STARTING TJ = 150oC
10
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
1 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
0.001
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
CURRENT
TRANSFORMER
+
IAS
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS ≤ 20V
50Ω
tP
0V
50Ω
DUT
+
VDD
-
50V-150V
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
5
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| PDF Descargar | [ Datasheet FSGYC260R3.PDF ] | |
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