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Advanced Power Electronics - AP18N20GH

Numéro de référence 18N20GH
Description AP18N20GH
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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18N20GH fiche technique
Advanced Power
Electronics Corp.
AP18N20GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristics
RoHS Compliant & Halogen-Free
D
G
Description
S
AP18N20 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP18N20GJ) are available for low-profile
applications.
BVDSS
RDS(ON)
ID
200V
170mΩ
18A
G DS
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
VGS Gate-Source Voltage
200 V
+ 20 V
ID@TC=25
Drain Current, VGS @ 10V
18 A
ID@TC=100
IDM
Drain Current, VGS @ 10V
Pulsed Drain Current1
9.5 A
60 A
PD@TC=25
Total Power Dissipation
89 W
PD@TA=25
Linear Derating Factor
Total Power Dissipation3
0.7 W/
2W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
1.4
62.5
110
Unit
/W
/W
/W
1
201412185

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