DataSheetWiki


LDTB114GLT3G fiches techniques PDF

Leshan Radio Company - Bias Resistor Transistor

Numéro de référence LDTB114GLT3G
Description Bias Resistor Transistor
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





1 Page

No Preview Available !





LDTB114GLT3G fiche technique
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Each pin mounted on the recommended land
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
50
50
5
500
200
150
55 to +150
Unit
V
V
V
mA
mW
C
C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB114GLT1G
S-LDTB114GLT1G
LDTB114GLT3G
S-LDTB114GLT3G
K7
K7
10 3000/Tape & Reel
10 10000/Tape & Reel
LDTB114GLT1G
S-LDTB114GLT1G
3
1
2
SOT-23
1
BASE R2
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCEO
BVEBO
ICBO
Emitter cutoff curren
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current transfer ratio
hFE
Input resistance
R2
Transition frequency
fT
Characteristics of built-in transistor
Min.
50
50
5
56
7
Typ.
10
200
Max.
0.5
580
0.3
13
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC= −50µA
IC= −1mA
IE= −720µA
VCB= −50V
VEB= −4V
IC/IB= −50mA/2.5mA
IC= −50mA , VCE= −5V
VCE= −10V , IE=50mA , f=100MHz
Rev.O 1/3

PagesPages 3
Télécharger [ LDTB114GLT3G ]


Fiche technique recommandé

No Description détaillée Fabricant
LDTB114GLT3G Bias Resistor Transistor Leshan Radio Company
Leshan Radio Company

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche