|
|
PDF LDTD143TLT3G Data sheet ( Hoja de datos )
| Número de pieza | LDTD143TLT3G | |
| Descripción | Bias Resistor Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de LDTD143TLT3G (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
50
40
5
500
200
150
−55 to +150
Unit
V
V
V
mA
mW
C
C
LDTD143TLT1G
S-LDTD143TLT1G
3
1
2
SOT-23
1
BASE
R1
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD143TLT1G
S-LDTD143TLT1G
LDTD143TLT3G
S-LDTD143TLT3G
E2
E2
4.7 _ 3000/Tape & Reel
4.7 _ 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 50
Collector-emitter breakdown voltage BVCEO 40
Emitter-base breakdown voltage
BVEBO 5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE 100
Input resistance
R1 3.29
Transition frequency
∗ Characteristics of built-in transistor
fT ∗ −
Typ.
−
−
−
−
−
−
250
4.7
200
Max. Unit
Conditions
− V IC=50µA
− V IC=1mA
− V IE=50µA
0.5 µA VCB=50V
0.5 µA VEB=4V
0.3 V IC/IB=50mA/2.5mA
600 − VCE=5V, IC=50mA
6.11 kΩ
−
− MHz VCE=10V, IE= −50mA, f=100MHz
Rev.O 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LDTD143TLT3G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LDTD143TLT3G | Bias Resistor Transistor | Leshan Radio Company |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |