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FDMS8320LDC fiches techniques PDF

Fairchild Semiconductor - N-Channel Dual Cool Power Trench MOSFET

Numéro de référence FDMS8320LDC
Description N-Channel Dual Cool Power Trench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDMS8320LDC fiche technique
October 2012
FDMS8320LDC
N-Channel Dual CoolTM Power Trench® MOSFET
40 V, 130 A, 1.1 mΩ
Features
„ Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A
„ Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ Next generation enhanced body diode technology,
engineered for soft recovery
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
„ OringFET / Load Switching
„ Synchronous Rectification
„ DC-DC Conversion
Pin 1
S
D
D
D
D
S
S
D
D
G
S
S
S
Pin 1
S
G
Top
Power 56
Bottom
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
40
±20
130
44
300
661
125
3.2
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
8320L
Device
FDMS8320LDC
Package
Dual CoolTM Power 56
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
2.9
1.0
38
81
16
23
11
Reel Size
13 ’’
Tape Width
12 mm
°C/W
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS8320LDC Rev. C
1
www.fairchildsemi.com

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