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PDF NGB18N40ACLB Data sheet ( Hoja de datos )
| Número de pieza | NGB18N40ACLB | |
| Descripción | Ignition IGBT | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NGB18N40CLB,
NGB18N40ACLB
Ignition IGBT
18 Amps, 400 Volts
N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Integrated Gate−Emitter Resistor (RGE)
• Emitter Ballasting for Short−Circuit Capability
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
VCES 430 VDC
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
ESD (Human Body Model)
R = 1500 W, C = 100 pF
VCER 430 VDC
VGE
18 VDC
IC 18 ADC
50 AAC
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF ESD
800
V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 115 W
0.77 W/°C
Operating and Storage Temperature Range TJ, Tstg −55 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
18 AMPS, 400 VOLTS
VCE(on) 3 2.0 V @
IC = 10 A, VGE . 4.5 V
C
G
RGE
E
D2PAK
CASE 418B
STYLE 4
MARKING DIAGRAM
4
Collector
GB
18N40xG
AYWW
13
Gate 2
Emitter
Collector
GB18N40x
x
A
Y
WW
G
= Device Code
= B or A
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NGB18N40CLBT4G D2PAK 800/Tape & Reel
NGB18N40ACLBT4G (Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 5
1
Publication Order Number:
NGB18N40CLB/D
1 page  
NGB18N40CLB, NGB18N40ACLB
TYPICAL ELECTRICAL CHARACTERISTICS
3 10000
2.5 IC = 15 A
2 IC = 10 A
1.5
IC = 5 A
1
TJ = 150°C
0.5
0
3 4 5 6 7 8 9 10
GATE TO EMITTER VOLTAGE (VOLTS)
Figure 7. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
1000
Ciss
100 Coss
10 Crss
1
0
0 20 40 60 80 100 120 140 160 180 200
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 8. Capacitance Variation
2
1.8
1.6
VTH + 4 s
VTH
1.4 VTH − 4 s
1.2
1
0.8
0.6
0.4
0.2
0
−50 −30 −10 10 30 50 70 90 110 130 150
TEMPERATURE (°C)
Figure 9. Gate Threshold Voltage versus
Temperature
30
VCC = 50 V
25 VGE = 5.0 V
RG = 1000 W
20 L = 2 mH
15
L = 3 mH
10 L = 6 mH
5
0
−50 −25 0 25 50 75 100 125 150 175
TEMPERATURE (°C)
Figure 10. Minimum Open Secondary Latch
Current versus Temperature
30 12
VCC = 50 V
VCC = 300 V
25
VGE = 5.0 V
10 VGE = 5.0 V
L = 2 mH
RG = 1000 W
RG = 1000 W
tf
20 L = 3 mH
8 IC = 10 A
L = 300 mH
15
L = 6 mH
10
6
4
td(off)
5
0
−50 −25 0 25 50 75 100 125 150 175
TEMPERATURE (°C)
Figure 11. Typical Open Secondary Latch
Current versus Temperature
2
0
−50 −30 −10 10 30 50 70 90 110 130 150
TEMPERATURE (°C)
Figure 12. Inductive Switching Fall Time
versus Temperature
www.onsemi.com
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NGB18N40ACLB.PDF ] | |
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