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PDF NGD18N45CLB Data sheet ( Hoja de datos )
| Número de pieza | NGD18N45CLB | |
| Descripción | Ignition IGBT | |
| Fabricantes | ON Semiconductor | |
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NGD18N45CLB
Ignition IGBT
18 Amps, 450 Volts
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• DPAK Package Offers Smaller Footprint for Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Emitter Ballasting for Short−Circuit Capability
• This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
VCES
VCER
VGE
IC
500 VDC
500 VDC
18 VDC
18 ADC
50 AAC
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD 400 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 115 Watts
0.77 W/°C
Operating and Storage Temperature Range
TJ, Tstg −55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
18 AMPS
450 VOLTS
VCE(on) 3 2.1 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
12
3
E
4 DPAK
CASE 369C
STYLE 7
MARKING DIAGRAM
1
Gate
2
Collector
YWW
G18
N45BG
4
Collector
3
Emitter
G18N45B = Device Code
Y = Year
WW = Work Week
G = Pb−Free Device
ORDERING INFORMATION
Device
Package
Shipping†
NGD18N45CLBT4G DPAK 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
NGD18N45CLB/D
1 page  
NGD18N45CLB
3.5
3.0 IC = 15 A
TJ = 150°C
2.5 IC = 10 A
2.0
IC = 5 A
1.5
1.0
0.5
0
4 5 6 7 8 9 10
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector−to−Emitter Voltage vs.
Gate−to−Emitter Voltage
10000
1000
Ciss
100 Coss
10 Crss
1
0
0 20 40 60 80 100 120 140 160 180 200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 8. Capacitance Variation
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−50 −30 −10 10 30 50 70 90 110 130 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Gate Threshold Voltage vs. Junction
Temperature
100
25°C
150°C
10
1
1 10
L, INDUCTANCE (mH)
Figure 11. Typical Open Secondary Latch
Current vs. Inductance
100
25°C
10 150°C
1
1 10
L, INDUCTANCE (mH)
Figure 10. Minimum Open Secondary Latch
Current vs. Inductance
12
10
VCC = 300 V
VGE = 5.0 V
RG = 1000 Ω
8 IC = 10 A
L = 300 mH
6
4
tf
td(off)
2
0
−50 −30 −10 10 30 50 70 90 110 130 150
TEMPERATURE (°C)
Figure 12. Inductive Switching Fall Time vs.
Temperature
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NGD18N45CLB.PDF ] | |
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