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Número de pieza | NIMD6001AN | |
Descripción | Dual N-Channel Driver | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NIMD6001AN (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! NIMD6001N, NIMD6001AN
Dual N-Channel Driver with
Diagnostic Output
60 V, 3 A, 110 mW
NIMD6001N/AN is a dual 3 Amp low-side switch with an
integrated common disable input and drain diagnostic output. Pulling
the Disable pin low will override any applied gate voltages and turn off
both FET switches. Should either Drain-Source voltage exceed
approximately 50 V, a logic 1 (> 3 V) will be asserted on the
Diagnostic/Feedback pin. Internal isolation diodes permit the Disable
and Diagnostic/ Feedback pins of multiple devices to be
interconnected in a “wired-OR” configuration without additional
components.
Features
• RDSON 110 mW Maximum at VGS = 10 V
• Avalanche Energy Specified
• Gate Drive Disable Input
• Drain-Source Voltage Diagnostic Feedback Output
• Electrically Isolated Drains for Low Crosstalk
• Internal Resistors Limit Peak Transient gate Current
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Automotive Injector Driver
• Solenoid / Relay Driver
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage (DC, sustained)
Gate−to−Source Voltage
Continuous Drain Current
VGS = 10 V, RqJA = 55°C/W
VGS = 5.0 V, RqJA = 55°C/W
Single Pulse Drain Current
Pulse duration = 80 ms
VDSS
VGS
ID
ID
60
"20
3.3
3.0
10
Vdc
Vdc
A
A
Single Pulse Drain-to-Source
Avalanche Energy
VDD = 60 V; VGS = 10 V; IPK = 2.6 A;
L = 76 mH; Start Tj = 25°C
EAS
258 mJ
Operating Junction Temperature
TJ −55 − 150 °C
Storage Temperature
TSTG
−55 − 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1
http://onsemi.com
3.0 AMPERES
60 VOLTS
RDS(on) = 110 mW
SOIC−8
CASE 751
MARKING DIAGRAM
Source 1
Gate 1
Source 2
Gate 2
1
2
3
4
8 Drain 1
7 Disable
6 Drain 2
5 Diag/Fbk
(Top View)
D6001x = Specific Device Code
x = N or A
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
18
27
36
45
INTERNAL DIAGRAM
ORDERING INFORMATION
Device
Package
Shipping
NIMD6001NR2G SOIC−8 2500/Tape & Reel
(Pb−Free)
NIMD6001ANR2G SOIC−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NIMD6001N/D
1 page 10
TJstart = 25°C
TJstart = 150°C
NIMD6001N, NIMD6001AN
1000
TJstart = 25°C
100
TJstart = 150°C
1
10 100
LOAD INDUCTANCE (mH)
Figure 8. Single Pulse Maximum Switch−off
Current vs. Load Inductance
10
10
LOAD INDUCTANCE (mH)
100
Figure 9. Single Pulse Maximum Switching
Energy vs. Load Inductance
Figure 10. Single Pulse Peak Drain Current and
Avalanche Energy Test Circuit
http://onsemi.com
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet NIMD6001AN.PDF ] |
Número de pieza | Descripción | Fabricantes |
NIMD6001AN | Dual N-Channel Driver | ON Semiconductor |
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