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PDF NCV8403A Data sheet ( Hoja de datos )
| Número de pieza | NCV8403A | |
| Descripción | Self-Protected Low Side Driver | |
| Fabricantes | ON Semiconductor | |
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NCV8403, NCV8403A
Self-Protected Low Side
Driver with Temperature
and Current Limit
42 V, 14 A, Single N−Channel, SOT−223
NCV8403/A is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
Features
• Short Circuit Protection
• Thermal Shutdown with Automatic Restart
• Over Voltage Protection
• Integrated Clamp for Inductive Switching
• ESD Protection
• dV/dt Robustness
• Analog Drive Capability (Logic Level Input)
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
www.onsemi.com
VDSS
(Clamped)
42 V
RDS(on) TYP
53 mW @ 10 V
ID MAX
(Limited)
15 A
Drain
Gate
Input
Overvoltage
Protection
ESD Protection
Temperature Current Current
Limit
Limit Sense
Source
4
123
SOT−223
CASE 318E
STYLE 3
4
MARKING
DIAGRAM
DRAIN
4
AYW
xxxxxG
G
12 3
GATE
SOURCE
DRAIN
12
3
DPAK
CASE 369C
YWW
xxxxxG
A = Assembly Location
Y = Year
W, WW = Work Week
xxxxx = V8403 or 8403A
G or G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 6
1
Publication Order Number:
NCV8403/D
1 page  
NCV8403, NCV8403A
TYPICAL PERFORMANCE CURVES
150
150°C
125
ID = 3 A
100
100°C
75
25°C
50
−40°C
25
3 4 5 6 7 8 9 10
VGS (V)
Figure 8. RDS(on) vs. Gate−Source Voltage
100
90 150°C, VGS = 5 V
80 150°C, VGS = 10 V
70
60
50 25°C, VGS = 5 V
40 25°C, VGS = 10 V
30
20
12 3 4 5
100°C, VGS = 5 V
100°C, VGS = 10 V
−40°C, VGS = 5 V
−40°C, VGS = 10 V
6 7 8 9 10
ID (A)
Figure 9. RDS(on) vs. Drain Current
2.00
1.75
1.50
ID = 5 A
25
−40°C
20
25°C
1.25
1.00
0.75
VGS = 5 V
VGS = 10 V
0.50
−40 −20 0 20 40 60 80 100 120 140
T (°C)
Figure 10. Normalized RDS(on) vs. Temperature
15 100°C
150°C
10
VDS = 10 V
5
56 78 9
VGS (V)
Figure 11. Current Limit vs. Gate−Source
Voltage
10
25
VGS = 10 V
20
VGS = 5 V
15
VDS = 10 V
10
5
−40 −20 0 20 40 60 80 100 120 140
TJ (°C)
Figure 12. Current Limit vs. Junction
Temperature
100
10
150°C
1
VGS = 0 V
0.1
100°C
0.01
25°C
0.001
−40°C
0.0001
0.00001
10 15 20 25 30 35 40
VDS (V)
Figure 13. Drain−to−Source Leakage Current
www.onsemi.com
5
5 Page 
NCV8403, NCV8403A
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
4
HE
1 23
e1
e
0.08 (0003)
A1
E
b
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX
A 1.50
1.63
1.75
A1 0.02
0.06
0.10
b 0.60 0.75 0.89
b1 2.90
3.06
3.20
c 0.24 0.29 0.35
D 6.30
6.50
6.70
E 3.30
3.50
3.70
e 2.20 2.30 2.40
e1 0.85
0.94
1.05
L 0.20 −−− −−−
C
L1 1.50
1.75
2.00
q H E 6.70 7.00 7.30
q 0°
− 10°
STYLE 3:
L L1 PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
ǒ ǓSCALE 6:1
mm
inches
www.onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NCV8403A.PDF ] | |
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