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PDF NCV8401ADTRKG Data sheet ( Hoja de datos )
| Número de pieza | NCV8401ADTRKG | |
| Descripción | Self-Protected Low Side Driver | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NCV8401, NCV8401A
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8401/A is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
Features
• Short Circuit Protection
• Thermal Shutdown with Automatic Restart
• Over Voltage Protection
• Integrated Clamp for Inductive Switching
• ESD Protection
• dV/dt Robustness
• Analog Drive Capability (Logic Level Input)
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
http://onsemi.com
VDSS
(Clamped)
42 V
RDS(ON) TYP
23 mW @ 10 V
ID MAX
(Limited)
33 A*
*Max current may be limited below this value
depending on input conditions.
Drain
Gate
Input
Overvoltage
Protection
ESD Protection
Temperature Current Current
Limit
Limit
Sense
Source
MARKING
DIAGRAM
DPAK
CASE 369C
STYLE 2
Y
WW
xxxxx
G
= Year
= Work Week
= 8401 or 8401A
= Pb−Free Package
1 YWW
2 NCV
3 xxxxxG
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
Device
Package
Shipping†
NCV8401DTRKG DPAK 2500/Tape & Reel
(Pb−Free)
NCV8401ADTRKG DPAK 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 10
1
Publication Order Number:
NCV8401/D
1 page  
NCV8401, NCV8401A
TYPICAL PERFORMANCE CURVES
80
70 150°C
60
100°C
50
ID = 3 A
45
150°C, VGS = 5 V
40
150°C, VGS = 10 V
35
30 100°C, VGS = 5 V
40 25°C
30
20
10 3−40°C 4 5 6 7 8 9
VGS (V)
Figure 8. RDS(on) vs. Gate−Source Voltage
2.00
10
1.75
25 25°C, VGS = 5 V
20 25°C, VGS = 10 V
100°C, VGS = 10 V
15 −40°C, VGS = 5 V
101 3
−40°C, VGS = 10 V
57
9
ID (A)
Figure 9. RDS(on) vs. Drain Current
45
40 −40°C
1.50
1.25
VGS = 5 V
1.00
0.75
VGS = 10 V
0.50
−40 −20 0 20 40 60 80 100 120 140
T (°C)
Figure 10. Normalized RDS(on) vs. Temperature
(ID = 5 A)
45
35
25°C
30
25 100°C
20 150°C
15
5
100
6 78 9
VGS (V)
Figure 11. Current Limit vs. Gate−Source
Voltage (VDS = 10 V)
10
40
VGS = 10 V
35
10
150°C
1
30
VGS = 5 V
25
20
15−40 −20 0 20 40 60 80 100 120 140
TJ (°C)
Figure 12. Current Limit vs. Junction
Temperature (VDS = 10 V)
0.1 100°C
0.01 25°C
0.001
0.0001 −40°C
10 15 20 25 30 35 40
VDS (V)
Figure 13. Drain−to−Source Leakage Current
(VGS = 0 V)
http://onsemi.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NCV8401ADTRKG.PDF ] | |
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