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PDF NP90N03VLG Data sheet ( Hoja de datos )
| Número de pieza | NP90N03VLG | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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NP90N03VLG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0129EJ0100
Rev.1.00
Sep 24, 2010
Description
The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A)
⎯ RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• Low input capacitance
⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V)
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP90N03VLG-E1-AY∗1
NP90N03VLG-E2-AY∗1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-252, Taping (E1 type)
TO-252, Taping (E2 type)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V) VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C) PT1
Total Power Dissipation (TA = 25°C) PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current ∗2
Repetitive Avalanche Energy ∗2
Tstg
IAR
EAR
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Tch(peak) ≤ 150°C, RG = 25 Ω
Ratings
30
±20
±90
±360
105
1.2
175
−55 to +175
41
168
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.43
125
°C/W
°C/W
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Page 1 of 6
1 page  
NP90N03VLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
ID = 45 A
5 Pulsed
VGS = 4.5 V
4
10 V
3
2
1
0
-75
-25
25
75 125 175
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
td(off)
VDD = 15 V
VGS = 10 V
RG = 0 Ω
tf td(on)
tr
1
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10
0V
1
0.1
0.01
0.001
Pulsed
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
Crss
100
0.01 0.1 1 10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50 10
40 VDD = 24 V
15 V
30 6 V
8
VGS 6
20 4
10
0
0
V DS
20 40 60
2
ID = 90 A 0
80 100
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10 100
IF - Drain Current - A
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP90N03VLG.PDF ] | |
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