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PDF NP60N03SUG Data sheet ( Hoja de datos )
| Número de pieza | NP60N03SUG | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP60N03SUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP60N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP60N03SUG-E1-AY Note
NP60N03SUG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-252 (MP-3ZK) typ. 0.27 g
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 30 A)
• High current rating
ID(DC) = ±60 A
• Low input capacitance
Ciss = 5000 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±60
±240
Total Power Dissipation (TC = 25°C)
PT1
105
Total Power Dissipation (TA = 25°C)
PT2
1.2
Channel Temperature
Tch 175
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg −55 to +175
IAR 41
EAR 168
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, RG = 25 Ω
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.43
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19547EJ1V0DS00 (1st edition)
Date Published November 2008 NS
Printed in Japan
2008
1 page  
NP60N03SUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
VGS = 10 V
ID = 30 A
8
6
4
2
0
-75
Pulsed
-25 25 75 125 175
Tch - Channel Temperature - °C
225
1000
SWITCHING CHARACTERISTICS
100
td(on)
td(off)
10 tr
VDD = 15 V
VGS = 10 V
RG = 0 Ω
1
0.1 1
tf
10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10
VGS = 10 V
1
0V
0.1
0.01
0.001
0
Pulsed
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
VGS = 0 V
f = 1 MHz
Coss
Crss
100
0.01 0.1 1 10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
VDD = 24 V
40 15 V
6V
30
VGS
20
10
8
6
4
10
0
0
VDS
20 40
2
ID = 60 A
0
60 80 100
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
VGS = 0 V
di/dt = 100 A/μs
10
0.1 1
10
IF - Diode Forward Current - A
100
Data Sheet D19547EJ1V0DS
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NP60N03SUG.PDF ] | |
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