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ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NVMFS5113PL
Description Power MOSFET ( Transistor )
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NVMFS5113PL fiche technique
NVMFS5113PL
Power MOSFET
60 V, 14 mW, 64 A, Single PChannel
Features
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
NVMFS5113PLWF Wettable Flanks Product
NVM Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
rent
3)
RqJC
(Notes
1,
2,
Power
(Notes
Dissipation
1, 2)
RqJC
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain Cur-
rent
3)
RqJA
(Notes
1,
2,
Power
(Notes
Dissipation
1, 2)
RqJA
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
60
"20
64
45
150
75
10
7
3.8
1.9
415
55 to
175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 150 A
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 46 A, L = 0.3 mH, RG = 25 W)
EAS 315 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoCase Steady State (Drain)
(Note 2)
RqJC
1.0 °C/W
JunctiontoAmbient Steady State (Note 2)
RqJA
39 °C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(on)
14 mW @ 10 V
22 mW @ 4.5 V
S (1, 2, 3)
ID
64 A
G (4)
PChannel
D (5, 6)
1
DFN5
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S XXXXXX
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
March, 2014 Rev. 1
1
Publication Order Number:
NVMFS5113PL/D

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